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  • Plasma-enhanced chemical vapor deposited silicon carbide ...

    Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes. The a-SiC was deposited on platinum or iridium wire for measurement of electrical leakage through the coating in phosph …

    Get Price
  • Plasma-enhanced chemical vapor deposited silicon carbide ...

    Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes.

    Get Price
  • ODM. PECVD Plasma enhanced chemical vapor deposition ...

    2021-3-16u2002·u2002CY-PECVD-450 film coating machine adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature. It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon ...

    Get Price
  • Amorphous silicon carbide thin films deposited by

    2013-7-19u2002·u2002Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications J. Huran 1, P. Boháček 1, V.N. Shvetsov 2, A.P. Kobzev 2, A. Kleinová 3, V. Sasinková 4, N.I. Balalykin 2,

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition - Photonexport

    Plasma Enhanced Chemical Vapor Deposition (PECVD). Allows thin films (coatings) to be deposited at lower temperatures when compared to the standard process of Chemical Vapor Deposition (CVD).PECVD uses the capacitive coupling between two parallel electrodes (a grounded + a RF-energized electrode) to excite reactant gases between the electrodes into a plasma.

    Get Price
  • Amorphous silicon carbide thin films (a-SiC:H) deposited ...

    2011-7-1u2002·u2002We investigated amorphous silicon carbide (a-SiC:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) as protective coatings for harsh environment applications. The influence of the deposition parameters on the film properties was studied.

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u20022011-9-2u2002·u2002Chemical Vapor Deposition. Volume 17, ... The present article is an overview on the elaboration of plasma-enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web-substrates.

    Get Price
  • Inductively-coupled plasma-enhanced chemical vapour ...

    2016-8-15u2002·u20021. Introduction. Silicon carbide (SiC) with its outstanding physical and mechanical properties, as well as its chemical inertness and high temperature stability is an interesting, but technologically challenging material with great opportunities for MEMS applications in harsh environments, .Young's modulus values of crystalline silicon carbide (e.g. 3C-SiC or 6H-SiC) in the range of 400 ...

    Get Price
  • Post treatments of plasma-enhanced chemical vapor ...

    2006-2-21u2002·u2002Post treatments by annealing or supercritical carbon dioxide (SCCO 2) exposure of plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon carbide (a-SiC:H) films are reported to reduce the dielectric constant up to 2.1.The a-SiC:H films were prepared using diethylsilane diluted in methane. The deposition precursors and conditions were chosen to fabricate a thermally …

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002The present article is an overview on the elaboration of plasma‐enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web‐substrates.

    Get Price
  • Plasma enhanced chemical vapor deposition process for ...

    A plasma enhanced chemical vapor deposition (PECVD) process for producing an amorphous semiconductive surface coating consisting essentially of hydrogenated silicon carbide (a-SiC:H) having an improved blood compatibility, the process including positioning a substrate to be coated in a reactor chamber; heating the substrate to a substrate temperature ranging from 0° C. to 350° C.; providing ...

    Get Price
  • Plasma‐enhanced chemical vapor deposited silicon carbide ...

    2003-10-20u2002·u2002Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes. The a-SiC was deposited on platinum or iridium wire for measurement of electrical leakage through the coating in phosphate-buffered saline (PBS, pH 7.4).

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002Chemical Vapor Deposition. Volume 17, ... The present article is an overview on the elaboration of plasma-enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web-substrates.

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition - Photonexport

    Plasma Enhanced Chemical Vapor Deposition (PECVD). Allows thin films (coatings) to be deposited at lower temperatures when compared to the standard process of Chemical Vapor Deposition (CVD).PECVD uses the capacitive coupling between two parallel electrodes (a grounded + a RF-energized electrode) to excite reactant gases between the electrodes into a plasma.

    Get Price
  • Amorphous silicon carbide thin films (a-SiC:H) deposited ...

    Hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were deposited using a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system with methane (CH4) and silane (SiH4 ...

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition (PECVD) of ...

    2021-7-3u2002·u2002Plasma Enhance Chemical Vapor Deposition of Silicon Dioxide (SiO. 2) Document No: Revision: PlasmaLab 100 PECVD. Author: Raj Patel, Meredith Metzler Page 1 . 1. Introduction . This report documents the study of deposition characteristics and film properties of silicon dioxide (SiO. 2

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002The present article is an overview on the elaboration of plasma‐enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web‐substrates.

    Get Price
  • Plasma enhanced chemical vapour deposition of B

    2015-6-29u2002·u2002Abstract: Boron doped silicon carbide a-SiC(B):H films were deposited on N-type Si(100) substrates by means of plasma enhanced chemical vapor deposition (PECVD). Structural properties of films were analyzed by RBS, ERD, FTIR and Raman methods. The electrical properties of structure Al/a-SiC(B):H/Si/Al were determined by I-V measurement.

    Get Price
  • Structural properties of amorphous silicon carbide films ...

    1998-6-4u2002·u2002An investigation of the structural properties of hydrogenated amorphous silicon carbide (a‐Si1−xCx:H) films prepared by the plasma‐enhanced chemical vapor deposition of silane and acetylene has been undertaken using a combination of infrared (IR), Raman, and x‐ray photoelectron spectroscopy (XPS) measurements. The compositions of the silicon, carbon, and hydrogen in the films were ...

    Get Price
  • Plasma-Enhanced Chemical Vapor Deposition of

    2010-1-1u2002·u2002Summary. Plasma-based technologies are increasingly used for the fabrication of thin films and coatings for numerous applications ranging from optics and optoelectronics to aerospace, automotive, biomedical, microelectronics, and others. The present chapter reviews the advances in plasma-enhanced chemical vapor deposition (PECVD).

    Get Price
  • Amorphous silicon carbide thin films (a-SiC:H) deposited ...

    Hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were deposited using a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system with methane (CH4) and silane (SiH4 ...

    Get Price
  • Plasma-deposited amorphous silicon carbide films for ...

    Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels. Dong Sing Wuu *, ... Plasma Enhanced Chemical Vapour Deposition 58%. Liquid Film 35%. Reduction 11%. Powered by Pure, Scopus & Elsevier Fingerprint Engine ...

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  • Atmospheric-Pressure Plasma-Enhanced Chemical Vapor ...

    2019-12-12u2002·u2002Atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using Surfx AtomflowTM 250D APPJ was utilized to synthesize amorphous silicon carbonitride coatings using tetramethyldisilizane (TMDZ) and hexamethyldisilizane (HMDZ) as the single source precursors. The effect of precursor chemistry and substrate temperature (Ts) on the properties …

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  • Stoichiometric Hydrogenated Amorphous Silicon Carbide Thin ...

    2013-7-13u2002·u2002SiC Silicon Carbide a-SiC:H Hydrogenated Amorphous Silicon Carbide a-Si Amorphous Silicon a-C Amorphous Carbon RF Radio Frequency PECVD Plasma Enhanced Chemical Vapour Deposition x Carbon content 1 - x Silicon content DC Direct Current DCSF DC Saddle Field eV Electron Volt MV.cm-1 Mega Volts per centimetre CVD Chemical Vapor Deposition

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  • Hot-wire plasma enhanced chemical vapour deposition system ...

    This research offers insights on the function of a home-built plasma enhanced chemical vapor deposition (PECVD) system in the preparation of silicon carbide (SiC) thin films. The work started with designing and building a reaction chamber for the PECVD system that would utilize radio frequency (RF), direct current (DC) and hotwire (HW).

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  • IDEALS @ Illinois: Plasma-enhanced chemical vapor ...

    Plasma-enhanced chemical vapor deposition of hydrogenated silicon carbide films from novel precursors Welcome to the IDEALS Repository. JavaScript is disabled for your browser. Some features of this site may not work without it. Browse. IDEALS. Titles Authors Contributors Subjects Date Communities.

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  • Oxidation study of plasma-enhanced chemical vapor ...

    An oxidation study of plasma-enhanced chemical vapor deposited (PECVD) and rf sputtered hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films was carried out using the infrared (IR) and electron spin resonance (ESR) techniques. a-Si1−xCx:H films with x=0.3, 0.5, and 0.8 were prepared with the PECVD method and significant oxide growth can only be obtained in a-Si0.2C0.8:H film.

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  • Plasma Enhanced Chemical Vapour Deposition (PECVD ...

    Plasma Enhanced Chemical Vapour Deposition (PECVD) PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks. Our PECVD systems are specifically designed to produce excellent uniformity and high rate films, with control of film ...

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  • (PDF) Residual stress in thin films PECVD depositions: A ...

    The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a‐SiC:H) films exposed to air and wet ambient environments is investigated.

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  • Chemical Vapor Deposition - Silicon Valley Microelectronics

    Plasma enhanced chemical vapor deposition is a low temperature, high film density deposition technique. PECVD takes place in a CVD reactor with the addition of plasma, which is a partially ionized gas with a high free electron content (~50%). This is a low temperature deposition method that takes place between 100°C – 400°C.

    Get Price
  • Plasma enhanced chemical vapor deposition process for ...

    A plasma enhanced chemical vapor deposition (PECVD) process for producing an amorphous semiconductive surface coating consisting essentially of hydrogenated silicon carbide (a-SiC:H) having an improved blood compatibility, the process including positioning a substrate to be coated in a reactor chamber; heating the substrate to a substrate temperature ranging from 0° C. to 350° C.; providing ...

    Get Price
  • Plasma‐enhanced chemical vapor deposited silicon carbide ...

    2003-10-20u2002·u2002Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes. The a-SiC was deposited on platinum or iridium wire for measurement of electrical leakage through the coating in phosphate-buffered saline (PBS, pH 7.4).

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002Chemical Vapor Deposition. Volume 17, ... The present article is an overview on the elaboration of plasma-enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web-substrates.

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition - Photonexport

    Plasma Enhanced Chemical Vapor Deposition (PECVD). Allows thin films (coatings) to be deposited at lower temperatures when compared to the standard process of Chemical Vapor Deposition (CVD).PECVD uses the capacitive coupling between two parallel electrodes (a grounded + a RF-energized electrode) to excite reactant gases between the electrodes into a plasma.

    Get Price
  • Amorphous silicon carbide thin films (a-SiC:H) deposited ...

    Hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were deposited using a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system with methane (CH4) and silane (SiH4 ...

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition (PECVD) of ...

    2021-7-3u2002·u2002Plasma Enhance Chemical Vapor Deposition of Silicon Dioxide (SiO. 2) Document No: Revision: PlasmaLab 100 PECVD. Author: Raj Patel, Meredith Metzler Page 1 . 1. Introduction . This report documents the study of deposition characteristics and film properties of silicon dioxide (SiO. 2

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002The present article is an overview on the elaboration of plasma‐enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web‐substrates.

    Get Price
  • Plasma enhanced chemical vapour deposition of B

    2015-6-29u2002·u2002Abstract: Boron doped silicon carbide a-SiC(B):H films were deposited on N-type Si(100) substrates by means of plasma enhanced chemical vapor deposition (PECVD). Structural properties of films were analyzed by RBS, ERD, FTIR and Raman methods. The electrical properties of structure Al/a-SiC(B):H/Si/Al were determined by I-V measurement.

    Get Price
  • Structural properties of amorphous silicon carbide films ...

    1998-6-4u2002·u2002An investigation of the structural properties of hydrogenated amorphous silicon carbide (a‐Si1−xCx:H) films prepared by the plasma‐enhanced chemical vapor deposition of silane and acetylene has been undertaken using a combination of infrared (IR), Raman, and x‐ray photoelectron spectroscopy (XPS) measurements. The compositions of the silicon, carbon, and hydrogen in the films were ...

    Get Price
  • Plasma-Enhanced Chemical Vapor Deposition of

    2010-1-1u2002·u2002Summary. Plasma-based technologies are increasingly used for the fabrication of thin films and coatings for numerous applications ranging from optics and optoelectronics to aerospace, automotive, biomedical, microelectronics, and others. The present chapter reviews the advances in plasma-enhanced chemical vapor deposition (PECVD).

    Get Price
  • Plasma enhanced chemical vapor deposition process for ...

    A plasma enhanced chemical vapor deposition (PECVD) process for producing an amorphous semiconductive surface coating consisting essentially of hydrogenated silicon carbide (a-SiC:H) having an improved blood compatibility, the process including positioning a substrate to be coated in a reactor chamber; heating the substrate to a substrate temperature ranging from 0° C. to …

    Get Price
  • Plasma‐enhanced chemical vapor deposited silicon carbide ...

    2003-10-20u2002·u2002Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes. The a-SiC was deposited on platinum or iridium wire for measurement of electrical leakage through the coating in phosphate-buffered saline (PBS, pH 7.4).

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon Carbide ...

    2011-9-2u2002·u2002Chemical Vapor Deposition. Volume 17, ... The present article is an overview on the elaboration of plasma-enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web-substrates.

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition - Photonexport

    Plasma Enhanced Chemical Vapor Deposition (PECVD). Allows thin films (coatings) to be deposited at lower temperatures when compared to the standard process of Chemical Vapor Deposition (CVD).PECVD uses the capacitive coupling between two parallel electrodes (a grounded + a RF-energized electrode) to excite reactant gases between the electrodes into a plasma.

    Get Price
  • Amorphous silicon carbide thin films (a-SiC:H) deposited ...

    Hydrogenated amorphous silicon carbide (a-SiCx:H) thin films were deposited using a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system with methane (CH4) and silane (SiH4 ...

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition (PECVD) of ...

    2021-7-3u2002·u2002Plasma Enhance Chemical Vapor Deposition of Silicon Dioxide (SiO. 2) Document No: Revision: PlasmaLab 100 PECVD. Author: Raj Patel, Meredith Metzler Page 1 . 1. Introduction . This report documents the study of deposition characteristics and film properties of silicon dioxide (SiO. 2

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon Carbide ...

    2011-9-2u2002·u2002The present article is an overview on the elaboration of plasma‐enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web‐substrates.

    Get Price
  • Plasma enhanced chemical vapour deposition of B-doped ...

    2015-6-29u2002·u2002Abstract: Boron doped silicon carbide a-SiC(B):H films were deposited on N-type Si(100) substrates by means of plasma enhanced chemical vapor deposition (PECVD). Structural properties of films were analyzed by RBS, ERD, FTIR and Raman methods. The electrical properties of structure Al/a-SiC(B):H/Si/Al were determined by I-V measurement.

    Get Price
  • Structural properties of amorphous silicon carbide films ...

    1998-6-4u2002·u2002An investigation of the structural properties of hydrogenated amorphous silicon carbide (a‐Si1−xCx:H) films prepared by the plasma‐enhanced chemical vapor deposition of silane and acetylene has been undertaken using a combination of infrared (IR), Raman, and x‐ray photoelectron spectroscopy (XPS) measurements. The compositions of the silicon, carbon, and …

    Get Price
  • Plasma-Enhanced Chemical Vapor Deposition of Functional ...

    2010-1-1u2002·u2002Summary. Plasma-based technologies are increasingly used for the fabrication of thin films and coatings for numerous applications ranging from optics and optoelectronics to aerospace, automotive, biomedical, microelectronics, and others. The present chapter reviews the advances in plasma-enhanced chemical vapor deposition (PECVD).

    Get Price
  • ODM. PECVD Plasma enhanced chemical vapor deposition ...

    2021-3-16u2002·u2002CY-PECVD-450 film coating machine adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature. It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon ...

    Get Price
  • Amorphous silicon carbide thin films deposited by

    2013-7-19u2002·u2002Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications J. Huran 1, P. Boháček 1, V.N. Shvetsov 2, A.P. Kobzev 2, A. Kleinová 3, V. Sasinková 4, N.I. Balalykin 2,

    Get Price
  • Plasma Enhanced Chemical Vapor Deposition - Photonexport

    Plasma Enhanced Chemical Vapor Deposition (PECVD). Allows thin films (coatings) to be deposited at lower temperatures when compared to the standard process of Chemical Vapor Deposition (CVD).PECVD uses the capacitive coupling between two parallel electrodes (a grounded + a RF-energized electrode) to excite reactant gases between the electrodes into a plasma.

    Get Price
  • Inductively-coupled plasma-enhanced chemical vapour ...

    2016-8-15u2002·u20021. Introduction. Silicon carbide (SiC) with its outstanding physical and mechanical properties, as well as its chemical inertness and high temperature stability is an interesting, but technologically challenging material with great opportunities for MEMS applications in harsh environments, .Young's modulus values of crystalline silicon carbide (e.g. 3C-SiC or 6H-SiC) in the range of 400 ...

    Get Price
  • Amorphous silicon carbide thin films (a-SiC:H) deposited ...

    2011-7-1u2002·u2002We investigated amorphous silicon carbide (a-SiC:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) as protective coatings for harsh environment applications. The influence of the deposition parameters on the film properties was studied.

    Get Price
  • Post treatments of plasma-enhanced chemical vapor ...

    2006-2-21u2002·u2002Post treatments by annealing or supercritical carbon dioxide (SCCO 2) exposure of plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon carbide (a-SiC:H) films are reported to reduce the dielectric constant up to 2.1.The a-SiC:H films were prepared using diethylsilane diluted in methane. The deposition precursors and conditions were chosen to fabricate a thermally …

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002The demand for low-cost transparent gas and moisture barrier materials initiates many activities in the area of roll-to-roll (R2R), CVD, thin film technology. The present article is an overview on the elaboration of plasma-enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers.

    Get Price
  • Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon

    2011-9-2u2002·u2002The present article is an overview on the elaboration of plasma‐enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web‐substrates.

    Get Price
  • Structural properties of amorphous silicon carbide films ...

    1998-6-4u2002·u2002An investigation of the structural properties of hydrogenated amorphous silicon carbide (a‐Si1−xCx:H) films prepared by the plasma‐enhanced chemical vapor deposition of silane and acetylene has been undertaken using a combination of infrared (IR), Raman, and x‐ray photoelectron spectroscopy (XPS) measurements. The compositions of the silicon, carbon, and hydrogen in the films were ...

    Get Price
  • Plasma-Therm: PECVD

    2021-5-24u2002·u2002Plasma-Therm, founded in 1974, designs and manufactures plasma etch and deposition systems, including ICP, RIE, DSE, PECVD, and HDPCVD, that are used in R&D and production settings for die singulation, solid state lighting, wireless, MEMS/NEMS, data storage, renewable energy, nanotechnology, photomask, and photonics.

    Get Price